• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Multiple integrated optical elements can be formed by bonding substrates comprising optical elements to each other or by providing optical elements on either side of the wafer substrate. In succession, the wafer is diced to obtain individual units. It is desirable to seal the individual die to prevent dicing slurry from entering between the wafers. Optical elements may be formed lithographically, directly, or using a lithographically generated master that embosses the elements. Alignment features facilitate the efficient production of such integrated multiple optics as well as post creation processing of optics on the wafer level.
    公开号:KR20010030924A
    申请号:KR1020007003622
    申请日:1998-10-02
    公开日:2001-04-16
    发明作者:하든브라이언；캐쓰맨알랜；펠드맨마이클
    申请人:디지탈 옵틱스 코포레이션；
    IPC主号:
    专利说明:

    Wafer level integration of multiple optical elements
    As the demand for smaller optical elements to be used in a wider variety of applications increases, the ability to produce these optical elements effectively increases. In forming such integrated multiple optical devices at the mass production level, the demand for accurate alignment is increasing. Moreover, this alignment is important when integrating one or more optical elements.
    The integrated plurality of optical elements is a plurality of optical elements stacked together along the Z axis, which is the propagation direction of light. Thus, light traveling along the Z axis passes through multiple devices in succession. These devices are integrated so that no additional device alignment is required, except for bringing the integrated device into alignment with the desired system, typically a system comprising active elements.
    Many optical systems require multiple optics. Many of these required optical elements include a plurality of refractive elements, a plurality of diffractive elements, and a plurality of refractive / diffractive hybrid elements. Many such multiple device systems have conventionally been formed by joining individual elements together or separately in an alignment structure.
    In bulk or macroscopic optics to be mounted using mechanical machine tools to the formed mechanical alignment structure, typical alignment accuracy that can be achieved is about 25-50 microns. Active alignment is required to achieve levels above 15-25 microns. Dynamic alignment typically involves turning on a light source, such as a laser, and places each optical element underneath with an uncured ultraviolet adhesive. Each part then moves with the delivery stage until a proper reaction from the laser is obtained. The component is then held in place and the epoxy is cured with ultraviolet light, thereby mounting the device. This is done continuously for each device in the system.
    Alignment accuracy less than 15 microns for individual devices can be obtained using dynamic alignment, but this accuracy will greatly increase the amount of time it takes to move the device. This increase is exacerbated when one or more optical elements are aligned. Therefore, such alignment accuracy is often impractical even if dynamic alignment is used.
    For more new applications of the optics, such as the application of the integrated beams mentioned above, disclosed herein in the pending US application serial number 08 / 727,837, which is hereby incorporated by reference, the invention and applicants, It is necessary to make optical systems that consist of optical elements and that the required tolerances are much smaller than can be achieved by traditional approaches. In addition to requiring small tolerances, cheaper devices are also required. The alignment tolerance required is from 1 micron to 5 microns, which is too expensive to achieve with traditional methods.
    To achieve higher alignment tolerances, passive alignment techniques are used, as disclosed in US Patent No. 5,683,469, entitled "Microelectronic Module Having Optical and Electrical Interconnect" to Feldman. One such passive alignment technique is to use a self-aligning property to achieve alignment with metal pads placed on optical elements and lasers and solder placed between them. The surface tension present therein as the solder flows causes the components to self-align. However, passive alignment has never been employed for wafer-to-wafer alignment. In particular, high density solder bumps and wafer thickness and weight make this alignment impractical.
    Another problem in integrating multiple optical devices formed on separate wafers at the wafer level arises from the dicing process for forming the individual integrated devices. Dicing processes are messy due to the use of dicing slurries. When one wafer is diced, its surface can be cleaned to remove the dicing slurry. However, when the wafers are bonded together, the slurry enters the gap between the wafers. It is very difficult to remove the slurry from the gap formed between the wafers.
    Integrated devices are also sometimes made by injection molding. In the case of injection molding, plastic elements can be made with two molded elements located on opposite sides of the substrate. Many plastic devices can be made simultaneously with multi-cavity injection molding tools.
    Glass elements are also sometimes made by molding, as disclosed in a patent entitled " Apparatus for Molding Glass Optical Elements " to US Pat. No. 4,883,528 to Carpenter. In this case, as with plastic injection molding, many integrated devices are formed by molding two devices on opposite sides of the substrate. Glass molding, however, has the disadvantage of being expensive and limited in size that can be used to fabricate equipment.
    In order to make optical elements inexpensive, cloning techniques are typically used. In addition to the plastic injection molding and glass molding mentioned above, individual devices may be embossed. An example of such embossing can be found in US Pat. No. 5,597,613 to Galarneau under the name “Scale-up Process for Replication Large Area Diffractive Optical Elements”. Replicated optics have not previously been used with solder self-alignment techniques. In the case of each replication method, many individual devices are created as cheaply as possible.
    These replication processes have never been used with subsequent dicing at the wafer level. This is mainly due to the stress applied on the embossed layer during dicing. When using embossing at the wafer level, inherent problems such as keeping the embossed polymer sufficiently attached to the substrate, which is particularly important at small scales or when integrating one or more devices, have not yet been solved.
    Moreover, these replication processes are incompatible with wafer-level photolithography processes. In particular, replication processes do not achieve the alignment accuracy required for the photolithography process. Although embossing is compatible with the lithographic process, lithographically patterning one device at a time will be too expensive. Moreover, the chemical process portion of the lithographic process can damage the embossing material.
    As is traditionally done, other problems arise in the embossing and lithography processes on plastics. In particular, plastics are damaged by the chemicals used in the lithographic process. Plastics are also too sensitive to warping due to thermal effects, which is not beneficial for the alignment required during the lithography process.
    The present invention relates to the integration of multiple optical devices on a wafer level. In particular, the present invention relates to the efficient generation of integrated multiple devices.
    The invention will be more fully understood from the accompanying drawings, which are given in the following description and by way of example only and are not limitative of the invention.
    Figure 1 shows a first embodiment for joining two wafers together.
    Figure 2 shows a second embodiment for joining two wafers together.
    3A is a perspective view showing wafers to be bonded.
    3B is a top view illustrating individual die on the wafer to be bonded.
    4A and 4B show specific examples of bonding two substrates to each other.
    5 is a flow chart of the bonding process of the present invention.
    6a shows a surface to be embossed by a master element in the form of a wafer.
    6B shows a surface with embossable material to be embossed by the master element thereon in wafer form.
    7 shows a wafer in which optical elements are formed on both sides.
    Fig. 8 is a sectional view of a substrate having a hybrid element made of microlenses, in which a diffraction element is directly integrated thereon.
    In view of the above background, an object of the present invention is to effectively form a plurality of optical elements. This effective formation is achieved by forming a plurality of optical elements integrated on the wafer level.
    Another object of the present invention is to approach the problem that arises when attempting to achieve such wafer level production of a plurality of integrated optical devices. These problems are to ensure correct alignment; Enabling accurate dicing of wafers with a plurality of integrated optical elements that constitute when one or more wafers are bonded to each other; And providing additional features to enable easy coupling of the integrated plurality of optical elements into the overall system for the desired application.
    Another object of the present invention is to provide embossing with sufficient adhesion to withstand photolithographic features and dicing and with sufficient alignment for use.
    These and other objects of the present invention will become more apparent from the detailed description given hereinafter. However, it should be understood that the detailed description provides specific embodiments, but merely provides a preferred embodiment of the present invention by way of illustration, which various changes and modifications within the spirit and scope of the present invention from this detailed description. This is because it is obvious to those skilled in the art.
    As shown in Fig. 1, the first substrate wafer 10 and the second substrate wafer 12 are bonded to each other to provide a plurality of integrated optical elements. Wafers are typical disks typically 4, 6, 8 or 12 inches in diameter and typically having a thickness between 400 microns and 6 millimeters. The substrate wafer may be of any desired shape. The substrates are preferably optically transparent and flat, with a slight change in surface height over the surface of the substrate, for example less than one wavelength, depending on the requirements of the desired application.
    These wafers have respective arrays of optical elements formed on one or both surfaces thereof. Individual optical elements may be diffractive elements, refractive elements or hybrids thereof. The dashed line 8 indicates where dicing will occur on the wafer to provide individual integrated devices.
    Bonding material 14 is placed at strategic locations on either of the substrates to facilitate adhesion of the substrate. By surrounding the optical elements forming the final integrated die, the adhesive 14 forms a seal between the wafers at critical junctions. The seal during dicing prevents the dicing slurry from entering between the elements, which may cause contamination of the elements. Since the elements remain bonded to each other, it is almost impossible to remove any dicing slurry trapped between them. The dicing slurry presents even more problems when the diffractive elements are bonded, because the structure of the diffractive elements tends to trap the slurry.
    Preferably, an adhesive or solder can be used as the bonding material 14. Solders are desirable in many applications because they are softer than adhesives and allow for easier migration prior to bonding. Adhesives are less expensive for many applications; They can be joined with or without heating; They are not oxidized; And they have the advantage of being transparent.
    When a liquid adhesive is used as the bonding material, the viscosity of the liquid adhesive is important. The adhesive should not be too thin, which then drops and contaminates the devices by providing uncertain adhesion and allowing the dicing slurry to enter between the devices on the way. The adhesive should not be too thick, so that the restoring force is too large and intimate contact sufficient to bond is not achieved between the substrates 10, 12. Liquid adhesives preferably have a viscosity between 1000 and 10000 centipoise. Satisfactory epoxies include Norland 68 and Masterbond UV 15-7.
    When a liquid adhesive is employed, it must be provided in a controlled manner, such as by spraying from a nozzle that is controlled according to the desired coordinates of the side receiving the liquid adhesive. After alignment of the wafers, the entire bond is cured to cure the liquid adhesive and complete the bond.
    If solder is used, an electroplating or sputtering process can be employed. For example, a masking material can be placed on top of the substrate wherever the substrate will not be soldered. The entire wafer is then placed in a bath or sputtering chamber. Then, when the solder is formed over the entire substrate and the masking material is removed, the solder remains where there is no masking material. Once the wafers are properly aligned, the solder is heated to flow. The solder is cooled and the bonding is completed by allowing resetting.
    When only one liquid adhesive is used as the bonding material as shown in FIG. 1, a more viscous adhesive is required so that the bonding material may remain where the adhesive is coated. Even with a viscous adhesive, the adhesive still spreads over a relatively large area, resulting in larger dead space between integrated devices that can accommodate the spread without causing the adhesive to interfere with the devices. This results in a need.
    It is also difficult to adjust the height of the adhesive when only the adhesive is used. This causes the amount of adhesive to be consumed excessively, and often the height of the adhesive and hence separation between wafers becomes larger than desired. Difficulties in adjusting the height of the adhesive also result in air being trapped in the space containing the optical elements. This arises from the height and uncertainty about the timing at which vacuum is formed between the wafer pairs. The air is undesirable because it may expand upon heating and break the bonds between the elements.
    Thus, a useful alternative is shown in Figure 2, where only the individual integrated optics of the wafer are shown. Stand offs 16 for each integrated device are etched or replicated to the bottom substrate wafer 12 at the same time an array of optical elements is made for the substrate wafer 12, typically with the substrate wafer. Is the same substance. The isolators 16 preferably have a trench formed between the two surfaces on which the adhesive 14 is to be placed. These trenches then provide the correct distance between the substrates to be bonded and provide one or more adhesive surfaces to which the adhesive 14 is bonded. This increased surface area also reduces the problem of droplet formation.
    When solder is used as the bonding material 14, solid phase insulators are preferably used to provide the desired separation distance between the wafers. The solder is then coated over the insulator in a thin layer, for example 4-5 microns. Although only solder may be used as the hole as shown in Fig. 1, it is more useful and economical to use solder in combination with the isolator.
    The use of an isolator allows a more uniform and predictable height to be obtained, allowing less air to be trapped between the bonded elements. Since the change in separation distance has been reduced, a vacuum may be formed between the substrates immediately before or at the point of contact between the bonding material and the other substrate.
    A substrate that does not include the insulators may have a notch formed in the substrate surface to accommodate the insulators 16 in the substrate. The notches may be formed simultaneously with the formation of any optical elements on the substrate surface. In the case of this configuration, the isolators 16 and corresponding notches serve as alignment features to facilitate alignment between wafers.
    3A shows two substrates 10, 12 before bonding and dicing. The individual optical elements 19 integrated may consist of one or more optical elements. Moreover, the optical elements on the wafers can be the same or different. Prior to bonding the wafers 10, 12 to each other, the bonding material 14 is placed on at least one of the wafers in the manner described above. Advantageously, the two substrates 10, 12 have reference marks 18 in some portion on the substrate to ensure that all individual elements on the substrate are aligned at the same time, with the outer edge of the substrate being most likely. Optionally, the fiducial marks 18 can be used to create mechanical alignment features 18 ′ on the wafers 10, 12. Either or both of the fiducial marks 18 and the alignment features 18 ′ may be used to align the wafer.
    3B shows a top view of the substrate 12 to be bonded, including the location of the peripheral bonding material 14 relative to the particular device 19. As can be seen from this plan view, the bonding material 14 must completely enclose the individual optical element indicated by 19.
    In the case of either of the embodiments shown in Fig. 1 or 2, the bonding material provided directly or using isolators allows each element to be sealed and used separately. Thus, when dicing the wafer to obtain individual devices, the dicing slurry used in the dicing process is prevented from contaminating the optical device. Thus, in addition to providing structural elements that maintain robustness during alignment and dicing, sealing of the bonding material makes the dicing process cleaner for the resulting integrated dies.
    A specific example of the integrated plurality of optical elements is shown in FIG. 4A. The refractive element 20 is formed on the surface of the first substrate 12. The diffraction element 22 is formed on the surface of the other substrate 10. In addition, a diffraction element 28 may be formed on the bottom of each substrate. Isolators 16 are formed simultaneously with the refractive lenses to form trenches for receiving the adhesive 14.
    When the lenses 20 on the wafer 12 directly face other wafers, the vertices of the lenses 20 may also be used to provide adequate space between the substrates 10, 12. If additional space is required, the isolators 16 can be made higher to obtain this adequate space.
    In addition to using the reference marks 18 as shown in FIG. 3A for the alignment of the substrates 10, 12, the reference marks 18 also allow the integration of a plurality of optical elements for their intended purpose. It may be used to provide metal pads 24 on opposite surfaces of the substrates rather than their bonding surface to facilitate alignment and insertion for use. Such metal pads are particularly useful when mating multiple integrated optical elements with active or electrical elements, such as in lasers for use in optical heads, laser pointers, detectors, and the like. Furthermore, the metal 26 can be placed on the same surface as the diffractive element 22 itself using the reference marks 18 to block light.
    An optional optical subsystem comprising discrete elements provided on the mounting substrate is shown in FIG. 4B. As shown in Figure 4B, in some configurations, one of the wafers is first diced to form individual dies, manually aligning the individual dies with another wafer, and providing a bonding material to provide an integrated optical subsystem. It is advantageous to seal the elements of and then dice the wafer-die pair. In FIG. 4B, the integrated optical subsystem includes a side emitting laser diode 25, which has been diced from the monitor diode 29 and the laser diode 25 into individual dies 11 in advance. And a mirror 27 for guiding light to the diffractive optical element 22 formed on the wafer 10. Individual elements 25, 27 and 29 are mounted on the substrate 12. Bonding material 14 seals each subsystem. The dotted line 8 indicates where the dicing will be. Although placement of individual dies on the wafer is still required, passive alignment is still employed efficiently and a seal formed around the bonded wafer-die pair still prevents dicing slurry from entering between the wafer-die pair. When separate elements are provided on the mounting substrate, the mounting substrate includes reference marks for each subsystem. The related structure is referred to as "Integrated Optical Head for Disk Drives and Method of Forming the Same", filed on September 27, 1996, with US Application Serial No. 08 / 727,837 and "Integrated Beam Sharper and Use Thereof" in 1997. US Application Serial No. 08 / 917,865, filed August 27, which is incorporated herein by reference.
    Figure 5 shows a flow chart for a general process of joining two wafers together in accordance with the present invention. In step 30, the substrate wafer is positioned relative to the bonding material to be dispersed. In step 32, a bonding material is provided to the wafer in a pattern to provide a seal about the periphery of the optical elements either directly or with the isolators 16. In step 34, the second substrate wafer is aligned with the first substrate wafer. The vacuum is activated to remove air from the substrate just before contact is made. In step 36, the wafers are brought into contact. In step 38, the alignment of the two wafers is secured. In step 40, the adhesive is cured, or the solder flows and is then cured. Once firmly bonded, the bonded wafers in step 42 are diced into individual devices.
    The devices bonded together are preferably produced by direct photolithography techniques such as those disclosed for diffractive optical elements in US Pat. No. 5,161,059 to Swanson, hereby incorporated by reference; Or, in the creation of spherical refractive elements, O. Wada's article "Ion-Beam Etching of Volumes 101, No. 10 of Solid state Science and Technology, published in October 1984 by General Electric Chemical Society," pp. 2373-2380. InP and its Application to the Fabrication of High Radiance InGAsP / InP Light Emitting Diodes "are preferably produced by melting the photoresist. Alternatively, when the masks used are gray scale masks, such as HEBS (High Energy Beam Sensitive) or absorptive gray scale masks, the photolithography technique used to make the diffractive optics is employed to make the refractive elements into any shape. It is disclosed in US Provisional Serial No. 60 / 041,042, filed March 21, 1997, hereby incorporated by reference.
    Alternatively, these photolithography techniques can be used to make a master element 48 in glass, which is then wafer in a layer of embossable material 50 onto the substrate 52 shown in FIG. 6A. Can be used in turn to imprint the desired device on the level. The layer 50 is preferably a polymer, while the substrate 52 is glass, such as fused silica, or plastic, preferably polycarbonate or acrylic. The polymer is preferably a UV curable acrylate photopolymer having good release properties from the master element and having good adhesion to the substrate so that it does not crack after curing or escape from the substrate during dicing. Suitable polymers include 40029 resin of type PHILIPS or GAFGARD 233. Dotted line 58 is a dicing line for forming individual integrated devices from the wafer.
    In the embodiment shown in FIG. 6A, a layer of embossable material 50 is provided on the master element 48. The layer of adhesion promoter 54 is preferably provided on the substrate 52 and / or the layer of release aid is provided on the master element 48 between the master element and the embossing material. The use of an adhesion promoter and / or release aid layer is particularly important when the master element and the substrate are of the same material or when the master element has a higher adhesion affinity to the embossable material.
    The type of adhesion promoter used is a function of the photopolymer, master element material and substrate material used as the embossable material. Adhesion promoters suitable for use with glass substrates are HexaMethyl DisiliZane (HMDS). This adhesion promoter allows the embossable material to bond better on the substrate 52, which is particularly important when embossing at the wafer level. This is because the dicing process must proceed as discussed below for the embossed wafer.
    The provision of the embossable layer 50 on the master element 48 and the adhesion promoter layer 54 on the substrate 52 advantageously provides a smooth surface to be contacted for embossing, facilitating removal of air bubbles as follows. Let's do it. The provision of an embossable layer on the master element 48 also provides a convenient mechanism for maintaining alignment of the unbonded, contacted and aligned wafers, as discussed below.
    If the substrate or master element is made of plastic, it is desirable to place the polymer on another non-plastic element because the plastic strongly absorbs light in the UV region used to activate the polymer. Thus, if UV radiation must pass through the plastic, higher intensity beams are required for the desired effect, which is not effective.
    The use of embossing at the wafer level is particularly useful when additional features are provided on the wafer using a lithography process, ie when material is added to or removed from the substrate. Such additional features may include an antireflective coating or other features, such as a metal pad for aligning a die that has been diced from the substrate 52 in the system. Further, any of these features can be lithographically provided on the opposite side 56 of the substrate 52.
    Typically, an antireflective coating will be applied over the entire surface rather than optional. However, when using antireflective coatings and metal pads, the metal will not adhere where the coating is, and having a coating covering the metal will not be satisfactory. Moreover, if the wafer is to be bonded to another wafer, the bonding material will not adhere to the surface with such an antireflective coating, thus requiring selective placement of the coating.
    In order to achieve the alignment required to perform the lithographic process in connection with embossing, reference marks, such as shown in FIG. 3, may be provided on the substrate 52 and the master element 48. When performing the lithographic process, the required alignment tolerance is better for glass as substrate than for plastic. Glass has a lower coefficient of thermal expansion and glass is flatter than plastic. In other words, glass is less curved and less distorted than plastic. These properties are especially important when forming devices on the wafer level.
    Although the embossable material 50 is shown on FIG. 6A provided on the master element 48, it is difficult to control the thickness of the embossable material 50 when applied on the master element 48. Since it is often required to make the embossable material 50 as thin as possible while still accepting the pattern, the substrate can be embossed with the embossable material 50 by spinning onto a photoresist or epoxy, for example, as shown in FIG. 6B. Providing on (52) may be beneficial. Thicker embossable material layers result in longer etching times, involve increased costs, and increase the likelihood of deterioration of the patterned material due to increased exposure to the etching process, resulting in variations in the etch rate across the device. Inaccuracies caused can be increased. The thickness of the embossable material 50 provided on the substrate 52 can be precisely controlled in a conventional manner.
    When placing the master element on the substrate, the wafer may not be in direct contact with the bottom directly. This is because air bubbles that would negatively affect embossed products will be present without any way to remove them.
    Therefore, in contacting the substrate and the master element, at first the master element merely contacts the edge top surface of the substrate and is then rotated to bring the wafer down to contact the substrate. This oblique contact allows air bubbles present in the embossed material to be pushed out from the sides. Since the master element is transparent, air bubbles can be visually observed. As pointed out above, it is the presence of the air bubbles that facilitates the contact of the surfaces to be smooth, which allows the diffractive element formed on the surface of the master element 48 to capture air even during this inclined contact. Because.
    The degree of tilt needed to remove air bubbles depends on the size and depth of the features to be replicated. The slope should be large enough so that the largest feature does not touch another wafer over the entire wafer upon initial contact.
    Optionally, if the replica wafer is flexible, the replica wafer may be warped to form a slightly convex surface. Then, the master element is brought into contact with the replica wafer which is centered downward, and then the replica wafer is restored to complete the contact over the entire surface, thereby removing the air bubbles. Again, the degree of warpage required is only sufficient to ensure that the largest features do not contact other wafers across the entire wafer at the first contact.
    When reference marks are used to align the master element 48 to the glass substrate 52 in accordance with the present invention, a traditional mask aligner can be used in a modified manner. Typically in a mask aligner, the mask is brought into contact with the plate and then vacuum seals and aligns the mask and plate. However, no vacuum can be created if a liquid embossed material, such as a polymer, is on the wafer top. Therefore, oblique contact is used. Once in contact, the wafers are aligned with each other in the traditional manner using reference marks before curing.
    Furthermore, the strength required to cure the polymer is very high, for example 3-5 W / cm 2 , and needs to be applied for a short process time, for example less than 30 seconds. If sufficient energy and strength are not supplied at this time, curing of the polymer can never be achieved. This is due to the fact that the photoacid generators contained in the polymer can be consumed by this incomplete exposure without complete polymerization. However, it is also difficult to provide such a high intensity light source to the mask aligner. This is due to the size and temperature of the high energy light source required. Heat from the high energy light source will distort the mask aligner frame when the mask aligner frame is exposed to thermal changes. Although the mask aligner can be thermally compensated or adapted to operate at high temperatures, the following solution provides more economical and satisfactory results.
    In addition to the oblique contact required to bring the master element into full contact with the substrate in the mask aligner, once such global contact is achieved, radiation from the UV light source is fed into a supply system, such as an optical fiber, rather than curing the entire substrate. To the master element-substrate in contact with The supply system only provides UV radiation to the individual sites of the polymer.
    The supply system is small enough to fit the mask aligner and does not dissipate enough heat to require a redesign of the mask aligner. When using optical fiber, these spots are approximately 2 mm. Alternatively, a small, well-enclosed UV laser can be used, i.e., which does not exert a great thermal effect on the system.
    The supply system preferably provides radiation to the spots around the wafer in a symmetrical manner. In the case of a 4 inch wafer, only about 6-12 spots are needed. If additional spots are required for increased stability, several spots can be placed towards the center of the wafer. These spots are preferably placed at the periphery and a minimum number of such spots are preferably used, whereby the area where the tack spot is located can achieve homogeneous polymerisation as well as areas that are not subject to local radiation. Because there is not.
    These tack spots combine the master with the substrate in place. The illumination used to cure the tack spots is only applied locally, and there are not enough of these tack spots so that the area under irradiation is small enough to greatly affect the rest of the embossable material. Once alignment is achieved and the master elements are bonded in place, the substrate-master element pair is removed from the aligner and then cured for polymerisation of the whole under high intensity UV light source over the entire surface. While preventing the tack spots from shifting the alignment achieved in the mask aligner, it allows the substrate-master pair to be removed from the mask aligner, thereby making it possible to use a high energy light source outside the mask aligner for curing of the polymer.
    Optionally, reference marks may be used to form mechanical alignment features around the substrate to be contacted. The mechanical alignment features may provide alignment along any axis and there may be one or more such mechanical alignment features. For example, the isolators of FIG. 4 are for aligning the wafer along the Y axis, while the metal pad provides alignment of the wafer pair for additional elements along the X and Z axis. The alignment features are preferably formed by the embossing itself.
    Embossing and lithographic processing on the opposite surface can be performed in any order. If embossing is performed first, it is advantageous to leave the master element covering the embossed layer until the subsequent processing on the opposite surface is complete. The master element then functions as a seal for the embossed structure, protecting the polymer from the solvent used during the lithographic process and accurately maintaining the feature throughout the heating during the lithographic process.
    If the lithographic process is performed first, more accurate alignment is required during embossing, which provides sufficient alignment for photolithographic features than is required during normal embossing. Thus, the embossing equipment is not set up for such alignment. The alignment techniques are then required during embossing.
    Once all desired processes are completed, the wafer is diced to form individual devices. The dicing applies mechanical stress to the embossed wafer. Therefore, full polymerization of the embossed portion and sufficient adhesion to the substrate are particularly important to ensure that the embossed portion does not break into thin layers during dicing. Therefore, attention should be paid to the selection of specific polymers, adhesion promoters, substrates, and how these elements work. Preferably, in order to avoid cracking the embossed layer into thin layers during dicing, the polymer adhesion to the substrate should ensure a shear stress of approximately 100 grams on the finished dies.
    As shown in Figures 1-4, when both wafers bonded together are embossed with a UV curable polymer, the use of UV epoxy is typically preferred for this bonding but is no longer a preferred option. This is because the UV cured polymer still has very low effective UV light provided to absorb high light in the UV region and to cure the epoxy. That is, in order to provide sufficient UV light to cure the epoxy, the intensity of UV light required is too large. Therefore, it is sometimes desirable to use a thermally cured resin to bond these wafers.
    Optionally, the polymer on the parts that do not make up the devices may be removed, and then the UV epoxy is employed in the removed areas where the UV polymer no longer has a UV polymer so that the glass substrate wafer with the UV polymer is separated from the other wafers. Direct bonding is possible. Preferred methods of removing the polymer include providing a metal pattern on the master element. This metal blocks light and prevents the polymer in the pattern from curing. When a liquid polymer is used, this uncured polymer may be washed off. Other materials, such as UV epoxy for wafer-wafer bonding, or metals for the adhesion of active elements or blocking light, may be placed in the portion where the polymer has been removed.
    In addition to the bonding of the two substrates shown in FIGS. 1 to 4, reference marks can be used to form optical elements on the other side of the substrate itself, as shown in FIG. The production may also be by any of the methods mentioned above for the production of optical elements. The double-sided element 70 of FIG. 7 has a diffractive element 72 on the first side 70a and a refractive element 74 on the second side 70b, but any desired element can be provided therein. Again, metal pads 76 may be provided through a lithographic process on a hybrid device.
    Another arrangement for a plurality of integrated optical elements is shown in FIG. 8, where the diffractive element 82 is formed directly on the refractive element 84. As shown in FIG. The refractive element can be made by any of the photolithography techniques mentioned above. In the specific embodiment shown in Fig. 8, the refractive element is formed by placing an annular photoresist layer 86 on the surface of the optical material using a mask. The photoresist is then partially flowed using controlled heat such that the photoresist is spherical 87. Thereafter, the surface is etched and the refractive element 84 having substantially the same shape as the photoresist 87 is formed by the changing etch rate of the photoresist 87 of varying thickness. Then, the micro lens 84 is further processed to form the diffraction element 82. The diffractive element may be formed by a lithography process or embossing.
    Aligned and bonded, or embossed wafers may include the same arrangement of devices or may include other devices. Furthermore, the wafers may be plastic rather than glass if alignment requirements permit. Preferably, integrated devices fabricated on the wafer level in accordance with the present invention range from about 100 microns to about a few millimeters and require an alignment accuracy of ± 1-2 microns, which is the reference marks and / or alignment of the present invention. Can be achieved by using features.
    When the optical elements are provided on the opposite surface of the substrate rather than the surface of the substrate bonded to each other, the acceptable alignment accuracy is ± 10 microns. This is due to the fact that some amount of tilt is corrected or introduced when light passes through the thickness of the glass.
    As an alternative embodiment of the fiducial marks used for passive alignment, the fiducial marks can be used to create mechanical alignment features such as corresponding grooves joined by spheres, metal pads joined by solder balls, and benches with corresponding recesses. Can be. Only a few of these alignment features are needed for the alignment of the entire wafer.
    As an alternative to placing the bond material around the periphery of each die, the die itself may be covered by the bond material at least in part of the optical path to the die. This increased bonding material will add to the stability of the die. However, it is desirable to have the largest possible difference in refractive index between the optical element and the next surface, otherwise the diffractive element will have to have deep etching, and the refractive element will have a larger sag height to function in the same way. Will need. Therefore, it is desirable to have air in this gap, because air has a refractive index of one. If greater stability is required, a bonding material with the smallest possible refractive index can be used when the bonding material must cover a portion of the optical path of the optical device. The optical elements are then preferably formed in a photoresist having a higher index of refraction than glass, where the elements formed in the photoresist are not etched into the substrate but act as themselves.
    In addition, an increase in the area of the bonding material increases the likelihood of the presence of air bubbles therein, which also degrades optical performance. Therefore, although the bonding material is provided on top of the entire die, it is often desirable to provide the bonding material covering only the top of a portion of the optical path for the die while passing the entire beam through the optical path to minimize the possibility of air bubbles. . Moreover, if a gap is provided in the active elements, the bonding material cannot be placed to interfere with the function of these active elements.
    All of the elements of the present invention, including alignment, are advantageously provided with metal pads for ease of coupling to a system that typically has active elements. Metal pads can be provided lithographically and effectively on a wafer level.
    Additionally, although the substrates have been described as being all made of one material, multiple layer substrates may be used. For example, a substrate in which an optically active material is sandwiched between two polar layers to form an optical separator can be used as the substrate.
    While the present invention has been described, it is obvious that it can be modified in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and such modifications are apparent to those skilled in the art to which the invention pertains within the scope of the following claims.
    权利要求:
    Claims (57)
    [1" claim-type="Currently amended] Providing a bonding material surrounding each die in the array of first dies on the first wafer;
    Aligning a plurality of second dies with the first dies, such that each first die has a second die aligned with it;
    Treating the bonding material to bond the aligned dies; And
    Dicing the bonded dies, wherein each pair of diced and bonded dies comprises at least one optical element to form an integrated optical subsystem. Formation of the system.
    [2" claim-type="Currently amended] The method of claim 1, wherein the providing step comprises providing the bonding material over the entire surface of the first wafer.
    [3" claim-type="Currently amended] The method of claim 1, wherein the second dies are on a second wafer,
    And the aligning step includes aligning the first and second wafers.
    [4" claim-type="Currently amended] 4. The method of claim 3, further comprising: removing material selectively from at least one of the first and second wafers or applying material to at least one of the first and second wafers in a predetermined pattern to attach additional elements. Further comprising the step of forming an integrated optical subsystem.
    [5" claim-type="Currently amended] The method of claim 1, wherein the second die is separated from each other,
    And the alignment step comprises aligning each second die with a corresponding first die.
    [6" claim-type="Currently amended] The method of claim 1, wherein one of the first and second dies is a semiconductor die.
    [7" claim-type="Currently amended] 7. The method of claim 6, wherein the semiconductor die comprises a vertical cavity lateral radiation laser.
    [8" claim-type="Currently amended] 7. The method of claim 6, wherein the semiconductor die comprises a detector.
    [9" claim-type="Currently amended] 7. The method of claim 6, further comprising mounting individual elements on one of the first and second dies.
    [10" claim-type="Currently amended] 10. The method of claim 9, wherein the mounting step comprises mounting at least one of a mirror and a laser.
    [11" claim-type="Currently amended] 10. The method of claim 9, wherein the mounting step comprises mounting optical elements.
    [12" claim-type="Currently amended] The method of claim 1, wherein the providing step comprises providing a bonding material over a portion of an optical path of at least one optical element on the die.
    [13" claim-type="Currently amended] The method of claim 1, wherein the providing step includes providing a bonding material around the periphery of each die to seal the die.
    [14" claim-type="Currently amended] The method of claim 1, wherein before the alignment step,
    And providing the isolators accurately on the first wafer to ensure a proper gap between the first and second wafers.
    [15" claim-type="Currently amended] The method of claim 1, wherein the adhesive provides sufficient sealing to prevent dicing slurry applied during the dicing step from entering the gap between the substrates.
    [16" claim-type="Currently amended] 2. The method of claim 1, further comprising the step of directly joining the plurality of wafers together to create a substrate.
    [17" claim-type="Currently amended] 17. The method of claim 16, wherein one of the wafers is made of an optically active material and sandwiched between two polar wafers.
    [18" claim-type="Currently amended] Making a master having an array of optical elements;
    Embossing a replica of the array of optical elements by applying the master to an embossable material; And
    Dicing the replica to form individual optics.
    [19" claim-type="Currently amended] 19. The method of claim 18, before the embossing step:
    Providing the embossable material in a thin film on the surface of the master.
    [20" claim-type="Currently amended] The method of claim 19, wherein before the embossing step:
    A method of forming an optical element on a wafer level, the method further comprising providing an adhesion promoter on the glass substrate.
    [21" claim-type="Currently amended] 20. The method of claim 19, wherein the glass substrate comprises reference marks,
    And aligning the master to the fiducial marks.
    [22" claim-type="Currently amended] 19. The method of claim 18, further comprising coating the replica with an antireflective coating.
    [23" claim-type="Currently amended] 19. The method of claim 18, comprising selectively removing material from the replica or selectively adding material to the replica in a predetermined pattern.
    [24" claim-type="Currently amended] 24. The method of claim 23, wherein said selectively removing or applying occurs prior to said embossing.
    [25" claim-type="Currently amended] 24. The method of claim 23, wherein the selectively removing or applying occurs after the embossing step.
    [26" claim-type="Currently amended] 24. The method of claim 23, wherein the selectively removing or applying comprises providing metal pads on the opposite surface of the replica that encloses the embossing step.
    [27" claim-type="Currently amended] 19. The method of claim 18, wherein the embossing step comprises embossing both sides of the glass substrate.
    [28" claim-type="Currently amended] 28. The method of claim 27, wherein a different wafer master is used to emboss each side of both sides.
    [29" claim-type="Currently amended] 29. The method of claim 28, wherein the first wafer master comprises diffractive optics and the second wafer master comprises refractive optics.
    [30" claim-type="Currently amended] 19. The method of claim 18, further comprising providing fiducial marks on the wafer master and the replica.
    [31" claim-type="Currently amended] 19. The wafer level phase of claim 18 including determining an alignment of the replica and the wafer master in a mask aligner and tacking the replica and the wafer master together once the alignment is confirmed. To form an optical element on the substrate.
    [32" claim-type="Currently amended] 32. The method of claim 31, comprising removing the replica and the wafer master from the mask aligner after tagging and curing the embossable material.
    [33" claim-type="Currently amended] 19. The method of claim 18, wherein the application comprises initially incomplete contact of the wafer master with the replica.
    [34" claim-type="Currently amended] 19. The method of claim 18, wherein the master is a wafer.
    [35" claim-type="Currently amended] 24. The method of claim 23, wherein said selectively removing or adding is lithographic.
    [36" claim-type="Currently amended] 24. The method of claim 23, wherein the selectively removing or adding comprises selectively removing embossable material.
    [37" claim-type="Currently amended] 37. The method of claim 36, wherein removing the selectively embossable material comprises providing a pattern of metal on the master, and washing away the uncured embossable material after the embossing step. A method of forming an optical element on a wafer level.
    [38" claim-type="Currently amended] 37. The method of claim 36, wherein selectively removing or adding comprises adding a material where embossable material has been removed.
    [39" claim-type="Currently amended] 32. The method of claim 31, wherein the tagging comprises locally curing the embossable material.
    [40" claim-type="Currently amended] 19. The method of claim 18, wherein the master is lithographically made.
    [41" claim-type="Currently amended] 19. The method of claim 18, wherein the embossing step comprises providing the embossable material on a substrate and then applying the master.
    [42" claim-type="Currently amended] 42. The method of claim 41 wherein the substrate is optically transparent and flat.
    [43" claim-type="Currently amended] 24. The method of claim 23, wherein the material is a metal for the attachment of additional devices.
    [44" claim-type="Currently amended] A substrate having two sides;
    Optical elements lithographically defined on the two surfaces; And
    An integrated two-sided, multi-optical device comprising lithographically defined additional features on at least one surface to which material is selectively removed or applied at one time.
    [45" claim-type="Currently amended] 45. The integrated double-sided multiple optical element of claim 44, wherein one surface of the substrate includes diffractive elements for providing at least one of beam splitting, generation of multiple spots, and scattered irradiation of specific regions. .
    [46" claim-type="Currently amended] 46. The integrated double-sided multiple optical element of claim 45, wherein the diffractive element is a plurality of diffractive elements.
    [47" claim-type="Currently amended] 47. The integrated dual-sided optical device of claim 46, wherein the substrate is a wafer and the optical devices are an array of optical devices.
    [48" claim-type="Currently amended] 45. The integrated double-sided, multi-optical device of claim 44, wherein said lithographically defined additional features comprise metal portions for blocking light.
    [49" claim-type="Currently amended] 45. The integrated double-sided multiple optical device of claim 44, wherein said lithographically defined additional features have metal portions to assist in bonding an active device to said integrated multiple optical device.
    [50" claim-type="Currently amended] 45. The integrated double-sided multiple optical element of claim 44, wherein the optical element on one surface is a refractive element and the optical element on the other surface is a diffraction element.
    [51" claim-type="Currently amended] 45. The integrated double-sided, multiple-optical device of claim 44, wherein the optical elements on at least one of the two surfaces are formed by embossing.
    [52" claim-type="Currently amended] 45. The integrated double-sided, multiple-optical device of claim 44, wherein the lithographically defined optical elements comprise photolithographically forming a master and embossing the optical elements using the master.
    [53" claim-type="Currently amended] 45. The integrated double-sided, multi-optical device of claim 44, further comprising features embossed from a photolithographically generated master.
    [54" claim-type="Currently amended] An optical element formed by the process of claim 1.
    [55" claim-type="Currently amended] An optical element formed by the process of claim 18.
    [56" claim-type="Currently amended] A hybrid optical device comprising a refractive optical element and a diffraction pattern formed on the curved surface of the refractive optical element
    [57" claim-type="Currently amended] 59. The hybrid optical element of claim 56, wherein said refractive element is lithographically formed.
    类似技术:
    公开号 | 公开日 | 专利标题
    JP6437590B2|2018-12-12|Assembly of wafer stack
    US10490594B2|2019-11-26|Injection molded microoptics
    US6800946B2|2004-10-05|Selective underfill for flip chips and flip-chip assemblies
    US4689291A|1987-08-25|Pedestal-type microlens fabrication process
    US5042709A|1991-08-27|Methods and apparatus for precise alignment of objects
    JP4340086B2|2009-10-07|Nanoprinting stamper and fine structure transfer method
    US7164814B2|2007-01-16|Optical element and manufacturing method thereof
    US8101457B2|2012-01-24|Mounting method, mounted structure, manufacturing method for electronic equipment, electronic equipment, manufacturing method for light-emitting diode display, and light-emitting diode display
    JP4501130B2|2010-07-14|Imaging device and manufacturing method thereof
    EP0928481B1|2001-07-25|Method for making a plurality of integrated optical heads
    US20140151936A1|2014-06-05|Pattern transferring apparatus and pattern transferring method
    US5212707A|1993-05-18|Array of diffraction limited lasers and method of aligning same
    US6643434B2|2003-11-04|Passive alignment using slanted wall pedestal
    US6985298B2|2006-01-10|Production method of microlens array, liquid crystal display device and production method thereof, and projector
    EP0587277B1|1997-04-16|Method for producing a semiconductor light emitting device
    US7477452B2|2009-01-13|Micro lens array, optical member and method of producing micro lens array
    US7433555B2|2008-10-07|Optoelectronic device chip having a composite spacer structure and method making same
    US7463401B2|2008-12-09|Integrated micro-optical systems
    US8192637B2|2012-06-05|Method and apparatus for imprinting microstructure and stamper therefor
    US6989932B2|2006-01-24|Method of manufacturing micro-lens
    KR100796582B1|2008-01-21|Exposure method and exposure device
    JP3983652B2|2007-09-26|Microlens array substrate manufacturing method and manufacturing apparatus
    JP3994681B2|2007-10-24|Element arrangement method and image display device manufacturing method
    JPWO2009153925A1|2011-11-24|Nanoimprint method and apparatus
    EP1070972B1|2004-12-01|An optical assembly and a method for manufacturing lens systems
    同族专利:
    公开号 | 公开日
    WO1999018612A3|1999-07-29|
    AT366998T|2007-08-15|
    US6610166B1|2003-08-26|
    US20040040648A1|2004-03-04|
    AU9597798A|1999-04-27|
    CA2304670C|2005-03-29|
    DE69838071D1|2007-08-23|
    EP1785746B1|2014-04-30|
    US20030011889A1|2003-01-16|
    EP1036415B1|2007-07-11|
    EP1785746A2|2007-05-16|
    CN1276916A|2000-12-13|
    JP2001519601A|2001-10-23|
    EP1785746A3|2007-05-30|
    CA2304670A1|1999-04-15|
    US20130083397A1|2013-04-04|
    EP1036415A2|2000-09-20|
    JP4310410B2|2009-08-12|
    US8318057B2|2012-11-27|
    CN1165994C|2004-09-08|
    DE69838071T2|2008-03-13|
    WO1999018612A2|1999-04-15|
    US6096155A|2000-08-01|
    US6406583B1|2002-06-18|
    US6844978B2|2005-01-18|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-10-03|Priority to US08/943,274
    1997-10-03|Priority to US8/943,274
    1998-10-02|Application filed by 디지탈 옵틱스 코포레이션
    1998-10-02|Priority to PCT/US1998/020666
    2001-04-16|Publication of KR20010030924A
    优先权:
    申请号 | 申请日 | 专利标题
    US08/943,274|US6096155A|1996-09-27|1997-10-03|Method of dicing wafer level integrated multiple optical elements|
    US8/943,274|1997-10-03|
    PCT/US1998/020666|WO1999018612A2|1997-10-03|1998-10-02|Wafer level integration of multiple optical elements|
    [返回顶部]